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| FDS6679Z October 2001 FDS6679Z 30 Volt P-Channel PowerTrench(R) MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * -13 A, -30 V. RDS(ON) = 9 m @ V GS = -10 V RDS(ON) = 13 m @ V GS = - 4.5 V * Extended V GSS range (-25V) for battery applications * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -30 -25/+20 (Note 1a) Units V V A W -13 -50 2.5 1.2 1.0 -55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJ C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking FDS6679Z Device FDS6679Z Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2001 Fairchild Semiconductor Corporation FDS6679Z Rev C (W) FDS6679Z Electrical Characteristics Symbol BV DSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = -250 A Min -30 Typ Max Units V Off Characteristics ID = -250 A,Referenced to 25C V DS = -24 V, V GS = 0 V V GS = -25 V, V DS = 0 V V GS = 20 V, V DS = 0 V V DS = V GS , ID = -250 A ID = -250 A,Referenced to 25C V GS = -10 V, ID = -13 A V GS = -4.5 V, ID = -11 A V GS =-4.5 V, ID =-13A, TJ =125C V GS = -4.5 V, V DS = -5 V V DS = -5 V, ID = -13 A -22 -1 -10 10 mV/C A A A On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance -1 -1.7 4.9 7.2 10 10 -3 V mV/C 9 13 13 m ID(on) gFS -50 43 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = -15 V, V GS = 0 V, f = 1.0 MHz 3803 974 490 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = -15 V, ID = -1 A, V GS = -10 V, RGEN = 6 18 9 92 54 32 18 147 86 94 ns ns ns ns nC nC nC V DS = -15 V, ID = -13 A, V GS = -10 V 67 11 15 Drain-Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -2.1 A Voltage -2.1 (Note 2) A V -0.7 -1.2 a) 50C/W (10 sec) 62.5C/W steady state when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS6679Z Rev C(W) FDS6679Z Typical Characteristics 60 V GS = -10V -6.0V -ID , DRAIN CURRENT (A) 45 -4.5V -3.5V RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2.2 VGS = - 3.5V 2 1.8 1.6 1.4 1.2 1 0.8 0 15 30 -I D, DRAIN CURRENT (A) 45 60 -4.5V -5.0V -6.0V -7.0V -8.0V -10V 30 -3.0V 15 0 0 0.5 1 1.5 2 2.5 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.04 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 175 T J , JUNCTION TEMPERATURE (oC) ID = -13A V GS = -10V ID = -6.5A RDS(ON) ON-RESISTANCE (OHM) , 0.03 0.02 T A = 125o C T A = 25o C 0.01 0.00 2 4 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 80 25o C 125o C -IS , REVERSE DRAIN CURRENT (A) V DS = -5V -ID , DRAIN CURRENT (A) 60 T A = -55o C Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 10 T A = 125o C 1 25 oC -55 oC 0.1 40 20 0.01 0 1.5 2 2.5 3 3.5 -V GS, GATE TO SOURCE VOLTAGE (V) 4 0.001 0 0.2 0.4 0.6 0.8 1 1.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6679Z Rev C(W) FDS6679Z Typical Characteristics 10 -V GS, GATE-SOURCE VOLTAGE (V) ID = -13A 8 CAPACITANCE (pF) -15V 6 V DS = -5V -10V 5000 f = 1 MHz V GS = 0 V 4000 CISS 3000 4 2000 C OSS 1000 CRSS 2 0 0 10 20 30 40 50 60 70 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 -V D S, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT -ID , DRAIN CURRENT (A) 10 10ms 100ms 1s 1 VGS = -10V SINGLE PULSE RJA = 125o C/W T A = 25o C 0.01 0.01 DC 100s 1ms P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 t1 , TIME (sec) 10 100 1000 -V D S DRAIN-SOURCE VOLTAGE (V) , Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 R JA(t) = r(t) + RJA RJA = 125 C/W P(pk) t1 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.01 o 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6679Z Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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